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| SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 400 V : 0.55 ohm : 10A : 45 nc : 134 W SW740 This power MOSFET is produced with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. D G S Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current (@Tc=100) IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25) Derating Factor above 25 Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) 6.3 40 30 450 13.4 5.5 134 1.08 -55~+150 300 A A V mJ mJ V/ns W W/ Drain to Source Voltage Continuous Drain Current (@Tc=25) Parameter Value 400 10 Units V A Thermal Characteristics Value Symbol R R R JC Units Max 0.93 62.5 / W / W / W Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min - Typ 0.5 - CS JA 1/6 REV0.2 04.11.1 SAMWIN Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ Tj Drain- Source Breakdown Voltage Breakdown Voltage Temperature coefficient VGS=0V,ID=250uA ID=250uA,referenced to 25 VDS=400V, VGS=0V IDSS Drain-Source Leakage Current Gate-Source Leakage Current IGSS Gate-Source Leakage Reverse VDS=320V, Tc=125 VGS=30V,VDS=0V VGS=-30V, VDS=0V 400 (Tc=25 unless otherwise noted) SW740 Value Test Conditions Min Typ Max Units Parameter 0.4 - V V/ - 1 100 -100 uA nA nA On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance VDS=VGS,ID=250uA VGS=10V,ID=5A 2.0 0.46 4.0 0.55 V ohm Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz 1450 145 35 1800 200 45 pF Dynamic Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) VDS=320V,VGS=10V, ID=10A (Note4,5) VDD=200V,ID=10A RG=50ohm (Note4,5) 30 60 150 60 45 9 20 50 150 300 150 55 nc ns Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET Min. - Typ. 330 3.57 Max. 10 40 1.5 - Unit. A IS=10A,VGS=0V IS=10A,VGS=0V, dIF/dt=100A/us V ns uc NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=18.6mH,IAS=10A,VDD=50V,RG=0ohm, Starting TJ=25 3. ISD10A,di/dt100A/us,VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300us,Duty Cycle2% 5. Essentially independent of operating temperature. 2/6 REV0.2 04.11.1 SAMWIN 10 1 VGS top: 15V 10V 9V 8V 7V 6V 5.5V bottom:5V SW740 10 ID,Drain Current [A] ID ,Drain Current [A] 150 C o 25 C 1 o 10 0 Note: 1.VDS=50V 2.250us pulse test. 10 -1 0.1 -1 10 10 0 10 1 2 4 6 8 10 VDS,Drain-to-Source voltage [V] VGS, Gate-Source Voltage [V] Fig 1. On-State Characteristics Fig 2. Transfer Characteristics 2.4 2.0 VGS=10V 1.6 VGS=20V 1.2 10 150 C o 25 C o 1 0.8 Note: 1.vGS=0v 2.250us test 0.4 Note:TJ=25 C 0.1 0.2 o 0.0 0 5 10 15 20 25 30 35 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current[A] VSD,Source-Drain Voltage[V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 3000 Ciss = Cgs+Cgd(Cds=shorted) Fig 4. On State Current vs. Allowable Case Temperature 12 2500 Coss= Cds+Cgd Crss = Cgd 10 VDS=320V VDS=200V Ciss 2000 8 Coss 1500 Note: 1000 6 VDS=80V Crss 1.VGS=0V 2.f=1MHz. 4 500 2 Note:ID=10A 0 0.1 0 1 10 0 5 10 15 20 25 30 35 40 45 VDS,Drain-Source Voltage [V] QG,Total Gate Charge [nC] Fig 5. Capacitance Characteristics (Non-Repetitve) 3/6 Fig 6. Gate Charge Characteristics REV0.2 04.11.1 SAMWIN 1.2 SW740 3.0 2.5 Drain-Source Breakdown Voltage 1.1 BVDSS [Normalized] 2.0 1.0 1.5 1.0 0.9 Note: 1.VGS=0V 2.ID=250uA 0.8 -100 -50 0 50 100 o 0.5 Note: 1.VGS=10V 2.ID=5A 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ,Junction Temperatur [ C] TJ,Junction Temperature[ C] Fig 7. Breakdown Voltage Variation vs. Junction Temperature 10 2 Fig 8. On-Resistance Variation vs. Junction Temperature 10 Operation In This Area Limted By RDS(ON) 8 ID , Drain Current[A] 10us 10 1 100us 6 1ms 10ms 10 0 4 10 -1 Note: 1.Tc=25 C 2.Tj=150 C 3.Single Pulse 0 2 10 10 1 10 2 10 3 0 25 50 75 100 o 125 150 VD,Drain-Source Voltage[V] Tc,Case Temperature [ C] Fig9. Maximum Safe Operating Fig 10. Maximum Drain Current Vs. Case Temperature 1 D = 0.5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g l e p u ls e 0 .0 1 N o te: o 1 .Z J C (t )= 0 .9 3 C /w M a x 2 .D u ty F a c t o r ,D = t1 /t2 3 .T j-T c = P D M * Z J C (t ) 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 Fig 11. Transient Thermal Response Curve t 1 ,S q u a r e W a v e P u ls e D u r a t io n ( s e c ) 4/6 REV0.2 04.11.1 SAMWIN Same Type as DUT 300nF SW740 VGS 10V 200nF 50K Qg Qgs Qgd VDS VGS DUT 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms RL VDS VDD (0.5 rated VDS) VDS 90% 10V Pulse Generator RG DUT Vin 10% tf td(off) td(on) tr ton toff Fig 13. Switching test Circuit & Waveforms L VDS VDD BVDSS RG DUT 10V IAS VDD 1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD ID(t) VDS(t) tp Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6 REV0.2 04.11.1 SAMWIN DUT SW740 + VDS __ L Driver RG Same Type as DUT VDD VGS dv/dt controlled by RG Is controlled by pulse period VGS (Driver) Gate Pulse Width D = --------------------------Gate Pulse Period 10V IFM,Body Diode Forward Current IS (DUT) IRM Body Diode Reverse Current VDS (DUT) Vf di/dt Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms 6/6 REV0.2 04.11.1 |
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